CN
|
PARAMETER |
RATING |
|
Storage Temperature |
-40°C ~ + 100°C |
|
Operating Temperature |
-40 ºC ~ +85°C |
|
Max Supply Voltage(Vcc) |
-0.3 ~ 4.0V |
|
Voltage at either output |
-0.3V~4.0V |
|
Peak input Optical Power |
+6.5dBm |
|
Lead Soldering Temperature |
260°C(Max) |
|
Lead Soldering Duration |
10sec(Max) |
|
ESD Level(HBM) |
2000v |
|
PARAMETER |
RATING |
|
Operating Case Temperature |
-40°C ~ + 85°C |
|
Vcc |
2.97~3.63V |
|
Operation Wavelength Range |
1260~1650nm |
(Unless otherwise specified, TA= -40~85 °C)
|
Parameter |
Symbol |
Min |
Typ. |
Max |
Unit |
Conditions |
|
Icc current |
Icc |
|
32 |
37 |
mA |
|
|
Differential impedance |
Z |
80 |
100 |
120 |
Ω |
|
|
Bandwidth (3dB) |
BW |
|
11 |
|
GHz |
|
|
Low frequency cutoff |
BWL |
|
0.5 |
|
KHz |
|
|
Differential transimpedance |
Tz |
|
6 |
|
kΩ |
|
|
RSSI output offset (no light) |
Ioffset |
|
0.1 |
1 |
uA |
|
|
RSSI current gain |
Imon Gain |
|
1 |
|
A/A |
|
|
Differential output voltage |
Vout |
|
200 |
|
mVp-p |
|
(Unless otherwise specified, TA= -40~85 °C)
|
Parameter |
Symbol |
Min |
Typ. |
Max |
Unit |
Conditions |
|
Responsivity |
R |
0.8 |
0.85 |
|
A/W |
λ=1310nm |
|
Average unstressed |
Psens (Unst) |
- |
-16.5 |
-15 |
dBm |
10.3125Gbps, |
|
Optical overload(OMA) |
Povrld |
+1.5 |
3 |
|
dBm |
(Note 1) |
Notes:
1. Typical values defined as a typical process, Case temperature at 25C and Vcc at 3.3V while max. and min. values are under the worst or best case process, Power supply and junction temperature for the parameter specified.
2. The state performance should be achievable dependent upon the RF environment in which the user packages the ROSA.
